ULVAC and SAL team up to revolutionize optical devices with new technology
- ULVAC and Silicon Austria Labs GmbH are collaborating on the development of plasma etching processes for high-volume manufacturing of thin-film lithium niobate.
- Thin-film lithium niobate is recognized for its key attributes, including wide bandwidth, low loss, and high-power efficiency, essential for modern data communication.
- The partnership focuses on enhancing manufacturing processes to meet increasing demands for data communication technologies.
In Chigasaki, Japan, on December 9, 2024, ULVAC, Inc. and Silicon Austria Labs GmbH (SAL) announced a collaborative effort to develop plasma etching processes to improve high-volume manufacturing of thin-film lithium niobate (TFLN). This material is recognized for its wide bandwidth, low loss, and power efficiency, making it highly suitable for the increasing demands of data communication. The partnership aims to leverage ULVAC's advanced plasma etching system Model 'NLD-5700' to boost research and development efforts in TFLN, particularly focusing on integrating and scaling materials on a 200mm platform. Key figures in both organizations expressed their confidence in the growth potential of the optical device field, underlining the importance of their partnership for future technological advancements in microelectronics. Both companies aim to address challenges posed by the growing complexity of data communication networks and the need for innovative solutions that can meet the rising demands of connectivity across various sectors. With SAL being a leading research center for electronics and software systems, this collaboration is expected to create significant advancements in integrated photonics. ULVAC's extensive experience in compound materials will provide essential support to SAL's research objectives, with a commitment to producing beneficial results for both companies involved.