Toyoda Gosei claims breakthrough in power device performance with new technology

In Japan, on January 7, 2025, Toyoda Gosei's advancements in gallium nitride (GaN) substrate technology have been confirmed to significantly enhance the performance of power devices. These improvements were highlighted in an article published in Physica Status Solidi (RRL) – Rapid Research Letters, which is recognized in the field of solid-state physics. The exploration of GaN substrates is crucial as they facilitate better energy savings and are a step towards achieving more efficient power regulation features in electronic devices. Switching from silicon to gallium nitride is becoming increasingly vital in modern technology due to its remarkable efficiency, with potential energy savings reaching up to 90%. Such savings are necessary for addressing environmental concerns, particularly those relating to CO2 emissions. The Japanese Ministry of the Environment is currently leading projects aimed at broadening the use of GaN power devices across various sectors, effectively underlining the urgency and relevance of this technology in the context of energy conservation and sustainable development. A key collaborative effort is being made between Toyoda Gosei and Osaka University, which has resulted in the development of GaN substrates from GaN seed crystals. This partnership aims to produce larger substrates that meet the growing demand for high-quality GaN materials. Through extensive testing, it has been shown that power devices manufactured with these newly developed GaN substrates exhibit superior performance compared to those produced using commercially available alternatives. This includes enhancements in power regulation capacity and boosted yield ratios, indicating a promising leap forward in manufacturing practices regarding energy-efficient technology. To foster further advancements in this area, Toyoda Gosei plans to continue partnerships with government entities, academic institutions, and industry stakeholders. These collaborations are expected to expedite the dissemination and, consequently, the practical application of GaN substrate technology, marking a significant step forward in the quest for high-performance power devices that can significantly contribute to the reduction of carbon footprints in various applications. As the market for energy-efficient devices expands, the impact of Toyoda Gosei's innovations in GaN substrates will play an essential role in shaping a more sustainable future.